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Samsung UFS 2.1 - 256GB
The drive is rated for up to 1000 MB/s sequential read speed as well as up to 260 MB/s sequential write speed. Random read/write performance of the drive is up to 58K/50K of read/write IOPS. The new drive is tangibly faster when compared to Samsung's previous-generation 512 GB eUFS 2.1 solution, so the upcoming smartphones will offer not only more storage, but also higher performance.
Part number list
KLUEGAJ1ZD-C0CP | KLUEGAJ1ZD-C0CQ | KLUEG8U1YB-B0CP
KLUEG8U1YB-B0CQ | KLUEGAJ1ZD-B0CP | KLUEGAJ1ZD-B0CQ
Samsung UFS 2.1 - 256GB
Set a new standard for mobile performance
Lightning-fast downloads, groundbreaking app performance and a massive storage capacity - Samsung UFS (Universal Flash Storagel is menary bulttomalle devices faster, with a form factor that leaves room for all new possibilities.
Awaken a new era of mobile
UFS 2.1 : The next level of mobile storage
Blazing fast 5G, super charged app performance, industry-beating read-write speeds – UFS 2.1 is here. With an astonishing 6Gbps bandwidth, it removes speed bottlenecks to unleash the full potential of your fastest products. The security level of UFS 2.1 does guarantee a much safer environment to store and run different pieces of information/files without losing data or compromising your privacy.
Samsung’s eUFS 2.1 storage solution comes in an industry-standard 11.5 mm × 13 mm package and is based on 16 512 Gb V-NAND flash memory dies as well as a proprietary controller. The drive is compatible with SoCs featuring a UFS 2.1 interface that are relatively widely these days.
The drive is rated for up to 1000 MB/s sequential read speed as well as up to 260 MB/s sequential write speed. Random read/write performance of the drive is up to 58K/50K of read/write IOPS. The new drive is tangibly faster when compared to Samsung's previous-generation 512 GB eUFS 2.1 solution, so the upcoming smartphones will offer not only more storage, but also higher performance. Obviously, any eUFS 2.1 device is orders of magnitude faster than any microSD card.
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