Samsung’s HBM2 Flarebolt DRAM redefines high-performance memory with breakthrough bandwidth, power efficiency, and thermal management. Built on advanced TSV technology, it offers up to 256GB/s bandwidth per stack, ensuring optimal performance for AI, HPC, and graphics applications. Flarebolt delivers reliable, scalable solutions for next-generation data-intensive workloads.
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Samsung HBM2 Flarebolt revolutionizes memory by empowering high bandwidth, swift data transfer, advanced graphics and next-gen networking in small form factors.
8x faster than GDDR5 1 TB/s system memory bandwidth Samsung’s HBM2 Flarebolt delivers the fastest performance, increased 1,024 I/O and 1 TB/s of system memory bandwidth with 256 GB/s via 8 channels. The HBM2 Flarebolt’s record-setting data transmission meets the rising market demands of the new IT industry, such as AI and Machine Learning.
20% improved power efficiency
With 20% less power consumption compared to 1.5 V of GDDR5, Samsung HBM2 Flarebolt’s 1.35 V operating voltage makes control of power consumption significantly more effective.
Design flexibility with 8GB per cube 94% less PCB space used
The integral design, combining stacked memory and CPU/GPU, accomplishes massive space saving over GDDR5. The Samsung HBM2 Flarebolt occupies 94% less space compared to GDDR5 and presents the perfect solution for the sleekest of small form factors.
| Part Number | Applications | Density | Organization | Speed | Package | Product Status | Refresh |
| KHA843801B-MC12 | Server | 4 GB | 1024 | 2.0 Gbps | MPGA | EOL | 32 ms |
| KHA883901B-MC12 | Server | 8 GB | 1024 | 2.0 Gbps | MPGA | EOL | 32 ms |
You can purchase Samsung HBM2 Flarebolt 4Gb, 8Gb from VDO,
