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SK hynix - DRAM - HBM - HBM2E

  • High Capacity: Offers up to 16GB per stack, doubling the capacity of its predecessor, HBM2.
  • Exceptional Bandwidth: Provides 460 GB/s bandwidth per stack, significantly enhancing performance for data-intensive applications.
  • Advanced Process Technology: Manufactured using SK hynix’s advanced technology for superior performance and energy efficiency.
  • Energy Efficiency: Designed to consume less power compared to traditional DRAM while delivering superior data throughput.
  • 3D TSV (Through Silicon Via) Technology: Uses TSV stacking to achieve compact and high-density memory solutions, ideal for space-constrained systems.

VDO Distributor - Vietnam's Leading Technology Infrastructure ICT Distributor

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Website: vdo.com.vn

1900 0366

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