RAM SamSung - DDR3 - 4GB - bus: 1600, 1866, 2133

Most widely chosenmemory product

Perfect for every computing environment

Developed in 2005, Samsung’s industry-first DDR3 is the most used system solution, from PCs and home appliances, to automotive and medical devices.

High speed and performance

Double the bandwidth of DDR2

Samsung DDR3 enhanced bandwidth and reliabilty drives a broad range of applications such as notebooks, desktops, and industrial solutions including automotive, all at double the speed of DDR2.

Low power, efficient DRAM solution

Up to 30% reduction in power consumption versus DDR2

Samsung's industry-first 30 nm class DRAM consumes less power, lowering the TCO with a 30% reduction in power consumption versus the previous generation.

The 4Gb DDR3 SDRAM E-die is organized as a 128Mbit x 4 I/Os x 8banks or 64Mbit x 8 I/Os x 8banks device. This synchronous device achieves high-speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, Die Termination using ODT pin, and Asynchronous Reset.

The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR3 device operates with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V VDDQ. The 4Gb DDR3 E-die device is available in 78ball FBGAs(x4/x8).

PRODUCT CONFIGURATION:

Here are the specifications for the Samsung DDR3 4GB RAM with bus speeds of 1600 MHz, 1866 MHz, and 2133 MHz:

1. Samsung DDR3 4GB RAM - Bus Speeds: 1600 MHz, 1866 MHz, 2133 MHz

General Specifications:

• Memory Type: DDR3 SDRAM
• Capacity: 4GB
• Form Factor:
  • DIMM (for desktop systems)
  • SODIMM (for laptops, compact systems)
• Bus Speeds:
  • 1600 MHz
  • 1866 MHz
  • 2133 MHz
• Memory Voltage: 1.5V
• Data Transfer Rate:
  • 1600 MHz = 12.8 GB/s
  • 1866 MHz = 14.9 GB/s
  • 2133 MHz = 17.0 GB/s
• CAS Latency: Typically CL11 for 1600 MHz, CL11/CL13 for 1866 MHz, and CL13 for 2133 MHz (may vary slightly depending on the manufacturer or specific model)
• Error Checking: Non-ECC (Non-Error Correcting Code)

Performance:

• 1600 MHz: Ideal for basic computing tasks like browsing, office productivity, and general software usage.
• 1866 MHz: Suitable for moderate multitasking, light gaming, and other applications that require faster memory speeds.
• 2133 MHz: Best for more demanding tasks, including light gaming, moderate video editing, and running multiple applications simultaneously.

Compatibility:

• Motherboard Support: Compatible with DDR3 motherboards that support the specific bus speeds (1600 MHz, 1866 MHz, 2133 MHz). You should verify that your motherboard can handle the higher bus speeds (1866 MHz and 2133 MHz) for full compatibility.
• Operating System Compatibility: Works with both 32-bit and 64-bit operating systems, but your system should support 4GB of RAM for optimal performance.

Applications:

• Basic Computing: 4GB is sufficient for everyday tasks, such as web browsing, office applications, and media consumption.
• Multitasking: Adequate for users who run multiple applications at once.
• Light Gaming and Multimedia Editing: With higher bus speeds (1866 MHz, 2133 MHz), this RAM supports moderate gaming or basic video editing tasks.
• Legacy Systems: Ideal for upgrading older systems with DDR3 support, helping them handle modern operating systems and software.

Key Benefits:

• Increased Memory Capacity: 4GB provides more room for multitasking and handling larger workloads compared to lower-capacity modules like 2GB.
• Faster Speeds: The 1866 MHz and 2133 MHz options provide better data throughput, improving overall system responsiveness, especially in demanding applications.
• Energy Efficiency: Operating at 1.5V, this RAM consumes less power while offering a good balance between performance and energy efficiency.

Conclusion:

The Samsung DDR3 4GB RAM with bus speeds of 1600 MHz, 1866 MHz, and 2133 MHz is a versatile memory module suitable for a variety of tasks, from basic computing to light gaming and media editing. It provides an excellent upgrade option for older systems that still use DDR3 memory, offering a boost in performance, multitasking capability, and overall responsiveness.

If you are considering upgrading your system with this RAM, ensure compatibility with your motherboard and CPU to make the most out of the higher bus speeds.