RAM SamSung - DDR3 - 4GB - bus: 1600, 1866, 2133

Most widely chosenmemory product

Perfect for every computing environment

Developed in 2005, Samsung’s industry-first DDR3 is the most used system solution, from PCs and home appliances, to automotive and medical devices.

High speed and performance

Double the bandwidth of DDR2

Samsung DDR3's enhanced bandwidth and reliabilty drives a broad range of applications such as notebooks, desktops, and industrial solutions including automotive, all at double the speed of DDR2.

Low power, efficient DRAM solution

Up to 30% reduction in power consumption versus DDR2

Samsung's industry-first 30 nm class DRAM consumes less power, lowering the TCO with a 30% reduction in power consumption versus the previous generation.

The 4Gb DDR3 SDRAM E-die is organized as a 128Mbit x 4 I/Os x 8banks
or 64Mbit x 8 I/Os x 8banks device. This synchronous device achieves high-speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, Die Termination using ODT pin, and Asynchronous Reset.

The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR3 device operates with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V VDDQ. The 4Gb DDR3 E-die device is available in 78ball FBGAs(x4/x8).

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