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SK hynix - DRAM - HBM - HBM3E
Density: 24-36GB
Speed: 9.2Gbps and higher (1.18TB/s and higher)
Package type: KGSD
Available Stack: 8,12Hi
Application
- The fastest DRAM with Bandwidth reaching 1TB/s
- A powerful and essential memory solution for high-performance AI
SK hynix - DRAM - HBM - HBM3E
HBM3E Continues Leading the AI Market
SK hynix launched HBM3E to solidify it’s unrivaled leadership in AI memory market following its success with HBM3. The extended version of HBM3 helps accelerate business turnaround with its supply following industry’s largest scale of mass production of HBM.
10% Improved Thermal Resistance & Power Efficiency
SK hynix was the first to develop the MR-MUF (Mass Reflow-Molded Underfill) packing technology. This technique, which simultaneously bonds the chips together via reflow while filling the gaps with liquid material is significant in development of the highly thermal-conducive HBM. Together with technology on chip control, not only is wafer warpage prevented, but a new fill material was added to further better dissipate heat. Advanced MR-MUF has enhanced heat dissipation of HBM3E by 10% compared to the previous generation, while power efficiency has also improved by 10%.
x1.5 Capacity & Bandwidth with Same Package Size
HBM3E provides maximum capacity of 36GB and maximum per-pin data rate is 9.2Gbps, where maximum bandwidth exceeds 1.18TB per second, which is a 1.4times improvement compared to HBM3 both in terms of capacity and bandwidth.
The SK hynix HBM3E (High Bandwidth Memory 3 Enhanced) represents the latest innovation in memory technology, designed for high-performance computing (HPC) and artificial intelligence (AI) applications. Key features of the HBM3E include:
- Unprecedented Speed: It achieves a data transfer rate of 9.2 GT/s, a 40% improvement over its predecessor, HBM3. This results in a memory bandwidth of 1.15 TB/s per stack, capable of processing 230 Full HD movies (5GB each) in just one second
- Advanced Manufacturing: Incorporates Advanced MR-MUF (Mass Reflow Molded Underfill) technology for improved thermal performance and enhanced stability
- High Compatibility: Designed to integrate seamlessly with existing systems using prior generations of HBM memory, simplifying upgrades
- AI and HPC Optimization: Specifically tailored for the needs of AI, machine learning, and deep learning, the HBM3E is ideal for systems requiring extensive parallel data processing
Mass production of SK hynix HBM3E began in late 2024, solidifying its role in advancing AI memory technology and meeting the increasing demand for faster data handling in the computing industry
For inquiries or purchasing SK hynix HBM3E, please contact:
- Hotline: 1900 0366
- Email: [email protected]
- SK products: https://dis.vdo.com.vn/vi/san-pham/sk-hynix-p206
VDO is an official distributor of SK hynix enterprise products in Vietnam.
Density: 24-36GB
Speed: 9.2Gbps and higher (1.18TB/s and higher)
Package type: KGSD
Available Stack: 8,12Hi
Application
- The fastest DRAM with Bandwidth reaching 1TB/s
- A powerful and essential memory solution for high-performance AI
VDO Distributor - Nhà phân phối hạ tầng Công nghệ thông tin & Viễn thông hàng đầu Việt Nam
Website: vdo.com.vn
1900 0366
- Liên hệ tổng đài hoặc số điện thoại chi nhánh theo khu vực để nhận được tư vấn:
- Hà Nội: 024 7305 6666
- TP.HCM: 028 7308 6666
- Đà Nẵng: 0936300136