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RAM SamSung - DDR4 - 4GB - bus 2133, 2400, 2666, 3200
Easily processing massive workloads with enhanced speed, the DDR4 transfers more data faster than ever before, offering 4 bank groups (total 16 banks) to reduce interleaving delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.
Part number list:
K4A4G085WF-BCWE | K4A4G085WF-BIWE | K4A4G165WF-BCWE
K4A4G165WF-BIWE | K4A4G085WF-BCTD | K4A4G085WF-BITD
K4A4G165WE-BCWE | K4A4G165WF-BCTD | K4A4G165WF-BITD
K4A4G045WE-BCRC | K4A4G045WE-BCTD | K4A4G085WE-BCPB
K4A4G085WE-BCRC | K4A4G085WE-BCTD | K4A4G085WE-BIRC
K4A4G085WE-BITD | K4A4G165WE-BCPB | K4A4G165WE-BCRC
K4A4G165WE-BCTD | K4A4G165WE-BIRC | K4A4G165WE-BITD
K4A4G165WE-BIWE
RAM SamSung - DDR4 - 4GB - bus 2133, 2400, 2666, 3200
Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy. High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy. High performing memory empowers faster, powerful solutions.
Great performance for all solutions
Exceptional speed, high reliability, low energy consumption
High-performing memory empowers faster, powerful solutions.
Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.
An evolution in performanceIncreased bandwidth, up to 3,200 Mbps
Easily processing massive workloads with enhanced speed, the DDR4 transfers more data faster than ever before, offering 4 bank groups (total 16 banks) to reduce interleaving delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.
Less energy, greater efficiency
Advanced process technology
Reduce core and on/off power
Samsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting performance, reducing TCO. The 1.2V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.
Improved reliability
Safe CRC transmission
Parity bit to prevent errors
System reliability is ever more critical as data centers process ever more traffic. Advanced features of the Samsung DDR4 ensure superior data transmission, including Write CRC to help recognize multibit failures and parity checks for CMD/ADD to prevent system malfunctions.
Samsung 4GB DDR4 RAM series has improved computer performance in the best way with the following characteristics:
Ability to increase bandwidth up to 30%.
Reduce energy consumption by up to 40% and extend your computer's operating life.
Increase access speed to improve sequential data throughput.
Optimized for latest generation processors and platforms.
Single module capacity up to 4GB
Using a voltage of 1.2V, the power consumption is 20% less because DDR3 ram lines have a voltage of 1.5V, the speed is many times faster than DDR3 modules.
Samsung 4GB DDR4 RAM is designed to increase memory bandwidth by over 30%, allowing your system to process more data at the same time faster and much better than the DDR3 series.
CÁC MÃ SẢN PHẨM TƯƠNG ỨNG:
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